Infineon Technologies AG Single FETs, MOSFETs IPB80N06S2L06ATMA2

Description
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IPB80N06S2L06ATMA2 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IPB80N06S2L06ATMA2CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB80N06S2L06ATMA2CT-ND
Single FETs, MOSFETs IPB80N06S2L06ATMA2CT-ND
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Single FETs, MOSFETs - IPB80N06S2L06ATMA2TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB80N06S2L06ATMA2TR-ND
Single FETs, MOSFETs IPB80N06S2L06ATMA2TR-ND
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Single FETs, MOSFETs - IPB80N06S2L06ATMA2DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB80N06S2L06ATMA2DKR-ND
Single FETs, MOSFETs IPB80N06S2L06ATMA2DKR-ND
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Single FETs, MOSFETs - IPB80N06S2L06ATMA2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPB80N06S2L06ATMA2
Single FETs, MOSFETs IPB80N06S2L06ATMA2
MOSFET N-CH 55V 80A TO263-3

MOSFET N-CH 55V 80A TO263-3

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80N06S2L06ATMA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB80N06S2L06ATMA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB80N06S2L06ATMA2
MOSFET N-CH 55V 80A TO263-3

MOSFET N-CH 55V 80A TO263-3

Supplier's Site
MOSFET N-CHANNEL_55/60V

MOSFET N-CHANNEL_55/60V

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Technical Specifications

  Rochester Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB80N06S2L06ATMA2 IPB80N06S2L06ATMA2CT-ND IPB80N06S2L06ATMA2 IPB80N06S2L06ATMA2 IPB80N06S2L06ATMA2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
rDS(on) 0.0084 ohms
Package Type PG-TO263-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Surface Mount
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Transistor Grade / Operating Range Automotive
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