MOSFET N-CH 55V 80A TO263-3
Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 55V 80A TO263-3
| ODG (Origin Data Global) | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB80N06S2L06ATMA2 | IPB80N06S2L06ATMA2 | IPB80N06S2L06ATMA2CT-ND | IPB80N06S2L06ATMA2 | IPB80N06S2L06ATMA2 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 55 volts | ||||
| IDSS | 80000 milliamps | ||||
| PD | 250000 milliwatts |
