Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N-CH 55V 80A TO263-3
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 55V 80A TO263-3
| Rochester Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPB80N06S2L06ATMA2 | IPB80N06S2L06ATMA2 | IPB80N06S2L06ATMA2CT-ND | IPB80N06S2L06ATMA2 | IPB80N06S2L06ATMA2 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| rDS(on) | 0.0084 ohms | ||||
| Package Type | PG-TO263-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Surface Mount | |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
