MOSFET N-CH 40V 80A TO263-3 Product overview: IPB80N04S304ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N04S304ATMA
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer: Infineon Technologies
Win Source Part Number: 133200-IPB80N04S304A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 90μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 5200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
N-Channel 40V 80A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 40V 80A TO263-3
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-IPB80N04S304ATMA1 | IPB80N04S304ATMA1 | 133200-IPB80N04S304ATMA1 | IPB80N04S304ATMA1TR-ND | IPB80N04S304ATMA1 |
| Product Name | 40V 80A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N04S304ATMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 40 volts | 40 volts | |||
| PD | 136000 milliwatts | 136000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | Tape & Reel (TR) | PG-TO263-3 | TO-263; SOT3; PG-TO263-3-2 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
