IPB021N10NM5LF2 is an N-channel MOSFET in a PG-TO263-3 (D²PAK) package designed for hot-swap, battery protection, and e-fuse applications. It has a maximum drain-source voltage of 100 V, a maximum continuous drain current of 176 A, and a maximum on-state resistance of 2.1 mΩ at 25 °C. The device is avalanche-tested, RoHS compliant, and halogen-free according to IEC61249-2-21. It supports a pulsed drain current of 704 A and has an avalanche energy rating of 1166 mJ at 100 A. The thermal resistance from junction to case is 0.4 °C/W, and the maximum operating temperature is 175 °C.
OptiMOS™ 5 single N-channel Linear FET 2 100 V, 2,1 mΩ, 176 A in D²PAK 3-pin
The OptiMOS™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability.
Combined with the D2PAK 3-pin package, IPB021N10NM5LF2 is designed for inrush current protection applications such as hot-swap, e-fuse, and battery protection in Battery management systems (BMS).
Summary of Features
Benefits
Applications
Complementary products
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB021N10NM5LF2 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB021N10NM5LF2 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0021 ohms |
