Infineon Technologies AG MOSFET Transistor IGLD60R070D1AUMA3

GANFET N-CH Product overview: IGLD60R070D1AUMA3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IGLD60R070D1AUMA3 can be used for catalog matching and distributor lookup.

Infineon IGLD60R070D1AUMA3

Infineon IGLD60R070D1AUMA3

Power Field-Effect Transistor

N-Channel 600V 15A (Tc) 114W (Tc) Surface Mount PG-LSON-8-1

N-Channel 600V 15A (Tc) 114W (Tc) Surface Mount PG-LSON-8-1

Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series: CoolGaN™
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount