Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R190C6

Description
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. 600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3 650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3 Summary of Features Easy control of switching behavior Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss) Very high commutation ruggedness Easy to use Better light load efficiency compared to C3 Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness Better price performance in comparison to previous CoolMOS™ generations More efficient, more compact, lighter and cooler Benefits Improved power density Improved reliability General purpose part can be used in both soft and hard switching topologies Better light load effciency Improved effciency in hard switching applications Improved ease-of-use Reduces possible ringing due to pcb layout and package parasitic effects Potential Applications Consumer Adapter eMobility PFC stages for server & telecom SMPS PC power Solar Lighting
  • 500V-950V N-Channel Power MOSFET - IPA60R190C6 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R190C6 - 089356-IPA60R190C6 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPA60R190C6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. 600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3 650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3 Summary of Features Easy control of switching behavior Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss) Very high commutation ruggedness Easy to use Better light load efficiency compared to C3 Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness Better price performance in comparison to previous CoolMOS™ generations More efficient, more compact, lighter and cooler Benefits Improved power density Improved reliability General purpose part can be used in both soft and hard switching topologies Better light load effciency Improved effciency in hard switching applications Improved ease-of-use Reduces possible ringing due to pcb layout and package parasitic effects Potential Applications Consumer Adapter eMobility PFC stages for server & telecom SMPS PC power Solar Lighting
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA60R190C6 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA60R190C6
500V-950V N-Channel Power MOSFET IPA60R190C6
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. 600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3 650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3 Summary of Features Easy control of switching behavior Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss) Very high commutation ruggedness Easy to use Better light load efficiency compared to C3 Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness Better price performance in comparison to previous CoolMOS™ generations More efficient, more compact, lighter and cooler Benefits Improved power density Improved reliability General purpose part can be used in both soft and hard switching topologies Better light load effciency Improved effciency in hard switching applications Improved ease-of-use Reduces possible ringing due to pcb layout and package parasitic effects Potential Applications Consumer Adapter eMobility PFC stages for server & telecom SMPS PC power Solar Lighting

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

  • 600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3
  • 650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3

Summary of Features

  • Easy control of switching behavior
  • Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss)
  • Very high commutation ruggedness
  • Easy to use
  • Better light load efficiency compared to C3
  • Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
  • Better price performance in comparison to previous CoolMOS™ generations
  • More efficient, more compact, lighter and cooler

Benefits

  • Improved power density
  • Improved reliability
  • General purpose part can be used in both soft and hard switching topologies
  • Better light load effciency
  • Improved effciency in hard switching applications
  • Improved ease-of-use
  • Reduces possible ringing due to pcb layout and package parasitic effects

Potential Applications

  • Consumer
  • Adapter
  • eMobility
  • PFC stages for server & telecom
  • SMPS
  • PC power
  • Solar
  • Lighting
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R190C6 - 089356-IPA60R190C6 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R190C6
089356-IPA60R190C6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R190C6 089356-IPA60R190C6
Manufacturer: Infineon Technologies Win Source Part Number: 089356-IPA60R190C6 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20.2A (Tc) Gate-Source Threshold Voltage: 3.5V @ 630μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 1400pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 089356-IPA60R190C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 630μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1400pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IPA60R190C6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPA60R190C6
Single FETs, MOSFETs IPA60R190C6
POWER FIELD-EFFECT TRANSISTOR, 2

POWER FIELD-EFFECT TRANSISTOR, 2

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
600V 20.2A MOSFET Transistor
2088-IPA60R190C6
600V 20.2A MOSFET Transistor 2088-IPA60R190C6
MOSFETs N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 Product overview: IPA60R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R190C6 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 Product overview: IPA60R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R190C6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPA60R190C6
MOSFET IPA60R190C6
MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6

MOSFET N-Ch 600V 20.2A TO220FP-3 CoolMOS C6

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPA60R190C6 089356-IPA60R190C6 IPA60R190C6 2088-IPA60R190C6 IPA60R190C6
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R190C6 Single FETs, MOSFETs 600V 20.2A MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.1900 ohms
QG 58 nC
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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