Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R190C6

CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

• 600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3
• 650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3

Summary of Features

• Easy control of switching behavior
• Extremely low losses due to very low Figure of Merit (R _DS(on)* Q _g and E _oss)
• Very high commutation ruggedness
• Easy to use
• Better light load efficiency compared to C3
• Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
• Better price performance in comparison to previous CoolMOS™ generations
• More efficient, more compact, lighter and cooler

Benefits

• Improved power density
• Improved reliability
• General purpose part can be used in both soft and hard switching topologies
• Better light load effciency
• Improved effciency in hard switching applications
• Improved ease-of-use
• Reduces possible ringing due to pcb layout and package parasitic effects

Potential Applications

• Consumer
• Adapter
• eMobility
• PFC stages for server & telecom
• SMPS
• PC power
• Solar
• Lighting

Manufacturer: Infineon Technologies
Win Source Part Number: 089356-IPA60R190C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20.2A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 630μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1400pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 600V 20.2A TO220FP-3 CoolMOS C6 Product overview: IPA60R190C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R190C6 can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 2