Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB050N10NF2S IPB050N10NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB050N10NF2S - IPB050N10NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
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Datasheet
Datasheet Summary
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IPB050N10NF2S is a single N-channel power MOSFET in a D²PAK (PG-TO263-3) package, rated for 100 V drain-source voltage and 103 A continuous drain current. It features a maximum on-state resistance of 5.05 mΩ at 25°C and is 100% avalanche tested with a single-pulse avalanche energy rating of 100 mJ. The device is RoHS compliant and halogen-free per IEC 61249-2-21, and qualified to JEDEC standards. Its case operating temperature range is from -55°C to 175°C with a thermal resistance of 1.0°C/W from junction to case.

Datasheet Summary
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IPB050N10NF2S is a single N-channel power MOSFET in a D²PAK (PG-TO263-3) package, rated for 100 V drain-source voltage and 103 A continuous drain current. It features a maximum on-state resistance of 5.05 mΩ at 25°C and is 100% avalanche tested with a single-pulse avalanche energy rating of 100 mJ. The device is RoHS compliant and halogen-free per IEC 61249-2-21, and qualified to JEDEC standards. Its case operating temperature range is from -55°C to 175°C with a thermal resistance of 1.0°C/W from junction to case.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB050N10NF2S - IPB050N10NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB050N10NF2S
IPB050N10NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB050N10NF2S IPB050N10NF2S
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles

StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low- switching frequency
  • Industry standard footprint package
  • High current rating

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB050N10NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB050N10NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0050 ohms
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