Infineon Technologies AG N-Channel Power MOSFET IPB031N08N5

Description
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter
Request a Quote Datasheet
Description
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPB031N08N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB031N08N5
N-Channel Power MOSFET IPB031N08N5
Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter

Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package

Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Adapter
Supplier's Site Datasheet
Transistors - IPB031N08N5 - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB031N08N5
Transistors IPB031N08N5
MOSFET N-Ch 80V 120A D2PAK-2

MOSFET N-Ch 80V 120A D2PAK-2

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 80V 120A D2PAK-2

MOSFET N-Ch 80V 120A D2PAK-2

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB031N08N5 IPB031N08N5 IPB031N08N5
Product Name N-Channel Power MOSFET Transistors MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0031 ohms
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