IPB026N10NF2S is a 100 V N-channel power MOSFET in a D²PAK (PG-TO263-3) package, designed for high-current switching applications. It has a maximum drain-source on-state resistance of 2.65 mΩ at 25°C and a continuous drain current rating of 112 A at 175°C case temperature. The device supports a pulsed drain current of 648 A and has a single-pulse avalanche energy rating of 430 mJ. It is RoHS compliant and halogen-free per IEC61249-2-21, with an operating junction temperature range of -55°C to 175°C. The package dimensions are specified with a body size of 8.38 to 9.65 mm in length and 9.65 to 10.67 mm in width.
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB026N10NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB026N10NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0027 ohms |
