Infineon Technologies AG BUZ73ALIN

N-channel enhancement mode MOSFET designed for power switching applications, housed in a PG-TO220-3 package. Rated for a continuous drain current of 5.5 A at 37°C and a drain-source voltage of 200 V. Features an on-resistance of 0.6 Ω at 5 V gate-source voltage and 3.5 A drain current. Avalanche-rated with a single-pulse avalanche energy of 120 mJ. Operating junction temperature range is -55°C to +150°C. Thermal resistance from junction to case is 3.1 K/W. Meets IEC 68-1 climatic category 55/150/56 and DIN 40040 humidity category E. ESD sensitivity classified as HBM MIL-STD-883 Class 1.