Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB60R180C7

Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPB60R180C7 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPB60R180C7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1 2
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Datasheet
Datasheet Summary
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The IPB60R180C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency switching applications such as PFC and LLC topologies in server, telecom, and solar power systems. It is packaged in a PG-TO-263 (D²PAK) with a continuous drain current rating of 22 A at TJ ≤ 150°C and a pulsed drain current of 45 A. The device has a maximum on-state resistance of 180 mΩ at 25°C, a gate charge of 24 nC, and supports a dv/dt ruggedness of 120 V/ns. It meets JEDEC J-STD-20 and JESD22 standards for industrial-grade applications. The thermal resistance from junction to case is 1.83 °C/W, and the device is rated for operation from -55°C to 150°C junction temperature.

Datasheet Summary
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The IPB60R180C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency switching applications such as PFC and LLC topologies in server, telecom, and solar power systems. It is packaged in a PG-TO-263 (D²PAK) with a continuous drain current rating of 22 A at TJ ≤ 150°C and a pulsed drain current of 45 A. The device has a maximum on-state resistance of 180 mΩ at 25°C, a gate charge of 24 nC, and supports a dv/dt ruggedness of 120 V/ns. It meets JEDEC J-STD-20 and JESD22 standards for industrial-grade applications. The thermal resistance from junction to case is 1.83 °C/W, and the device is rated for operation from -55°C to 150°C junction temperature.

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Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPB60R180C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPB60R180C7
500V-950V N-Channel Power MOSFET IPB60R180C7
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1 2

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.


Summary of Features

  • Reduced switching loss parameters such as Q G, C oss, E oss
  • Best-in-class figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the world
  • Rugged body diode

Benefits

  • Enables increasing switching frequency without loss in efficiency
  • Measure showing key parameter for light load and full load efficiency
  • Doubling the switching frequency will half the size of magnetic components
  • Smaller packages for same R DS(on)
  • Can be used in many more positions for both hard and soft switching topologies

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Industrial
  • USB-PD

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

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Designers who used this product also designed with


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  • 2ED2110S06M |
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  • 2EDR8259X |
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  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20I12MF |
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  • 1EDI20N12AF |
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Supplier's Site Datasheet
Transistors - IPB60R180C7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB60R180C7
Transistors IPB60R180C7
600V 13A 155mΩ@10V,5.3A 68W 3.5V@260uA 1 N-Channel TO-263 MOSFETs ROHS

600V 13A 155mΩ@10V,5.3A 68W 3.5V@260uA 1 N-Channel TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPB60R180C7 IPB60R180C7
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1800 ohms
QG 24 nC
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