Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Manufacturer: Infineon Technologies
Win Source Part Number: 1045784-IPB180N10S40
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-7-3
Dimension: TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 275μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 14600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 180A TO263-7 Product overview: IPB180N10S402ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB180N10S402ATM
N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
N-Channel 100V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7-3
MOSFET N-CH 100V 180A TO263-7
MOSFET N-CH 100V 180A TO263-7
MOSFET N-Ch 100V 180A D2PAK-6
MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power RoHS Compliant: Yes
| Rochester Electronics | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB180N10S402ATMA1 | 2605122P | 1045784-IPB180N10S402ATMA1 | 278-IPB180N10S402ATMA1 | IPB180N10S402ATMA1DKR-ND | IPB180N10S402ATMA1 | IPB180N10S402ATMA1 | IPB180N10S402ATMA1 | 13AC9029 |
| Product Name | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB180N10S402ATMA1 | 100V 180A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 100V, To-263; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| rDS(on) | 0.0025 ohms | 0.0029 ohms | |||||||
| Package Type | PG-TO263-7 | TO-263; TO-263 | TO-263; SOT3; PG-TO263-7-3 | Tape & Reel (TR) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | TO-3; TO-263 | |
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| MOSFET Operating Mode | Enhancement | Enhancement |
