Infineon Technologies AG N-Channel Power MOSFET IPB017N10N5

Description
OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB017N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications Automotive DIN rail power supplies Domestic robots Programmable logic controller (PLC) Space applications Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Designers who used this product also designed with CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash
  • N-Channel Power MOSFET - IPB017N10N5 - Infineon Technologies AG
    Infineon Technologies AG
  • OEM Souring - 1463499-IPB017N10N5 - Win Source Electronics
    Win Source Electronics
  • Transistors - IPB017N10N5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB017N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications Automotive DIN rail power supplies Domestic robots Programmable logic controller (PLC) Space applications Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Designers who used this product also designed with CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPB017N10N5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB017N10N5
N-Channel Power MOSFET IPB017N10N5
OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB017N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications Automotive DIN rail power supplies Domestic robots Programmable logic controller (PLC) Space applications Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Designers who used this product also designed with CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash CY15B102Q-SXET | F-RAM (Ferroelectric RAM) BSG0811ND | N-Channel Power MOSFET S25FL256LAGMFM003 | Quad SPI Flash S25FL064LABMFA003 | Quad SPI Flash

OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications

OptiMOS™ 5 100V power MOSFET IPB017N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.


Applications

  • Automotive
  • DIN rail power supplies
  • Domestic robots
  • Programmable logic controller (PLC)
  • Space applications

Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on) reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Designers who used this product also designed with


  • CY15B102Q-SXET |
    F-RAM (Ferroelectric RAM)
  • BSG0811ND |
    N-Channel Power MOSFET
  • S25FL256LAGMFM003 |
    Quad SPI Flash
  • S25FL064LABMFA003 |
    Quad SPI Flash
  • CY15B102Q-SXET |
    F-RAM (Ferroelectric RAM)
  • BSG0811ND |
    N-Channel Power MOSFET
  • S25FL256LAGMFM003 |
    Quad SPI Flash
  • S25FL064LABMFA003 |
    Quad SPI Flash
  • CY15B102Q-SXET |
    F-RAM (Ferroelectric RAM)
  • BSG0811ND |
    N-Channel Power MOSFET
  • S25FL256LAGMFM003 |
    Quad SPI Flash
  • S25FL064LABMFA003 |
    Quad SPI Flash
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
100V 180A MOSFET Transistor
278-IPB017N10N5
100V 180A MOSFET Transistor 278-IPB017N10N5
Trans MOSFET N-CH 100V 180A 8-Pin(7+Tab) D2PAK T/R Product overview: IPB017N10N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB017N10N5 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 180A 8-Pin(7+Tab) D2PAK T/R Product overview: IPB017N10N5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB017N10N5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
OEM Souring - 1463499-IPB017N10N5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
OEM Souring
1463499-IPB017N10N5
OEM Souring 1463499-IPB017N10N5
Category: OEM Souring Win Source Part Number: 1463499-IPB017N10N5 Manufacturer: Infineon Technologies

Category: OEM Souring
Win Source Part Number: 1463499-IPB017N10N5
Manufacturer: Infineon Technologies

Buy Now
Transistors - IPB017N10N5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB017N10N5
Transistors IPB017N10N5
TO-263-7 MOSFETs ROHS

TO-263-7 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IPB017N10N5 278-IPB017N10N5 1463499-IPB017N10N5 IPB017N10N5
Product Name N-Channel Power MOSFET 100V 180A MOSFET Transistor OEM Souring Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0017 ohms
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Package Type TO-263; PG-TO263-7 Tape and Reel SOT3
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