Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R600P6

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Summary of Features

• Reduced gate charge (Q _g)
• Higher V _th
• Good body diode ruggedness
• Optimized integrated R _g
• Improved dv/dt from 50V/ns
• CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

• Improved effciency especially in light load condition
• Better efficiency in soft switching applications due to earlier turn-off
• Suitable for hard- & soft-switching topologies
• Optimized balance of efficiency and ease of use and good controllability of switching behavior
• High robustness and better efficiency
• Outstanding quality & reliability

Potential Applications

• PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
• PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

• 48 V intermediate bus converter (IBC)

Designers who used this product also designed with

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Manufacturer: Infineon Technologies
Win Source Part Number: 1185987-IPA60R600P6
Series: CoolMOS P6
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Family Name: IPA60R600P6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO-220-FP
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 557pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 28W (Tc)
Rds On (Maximum) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): STF10NM60ND; ZDX100N60; FS14KM-12A;
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

MOSFETs LOW POWER_PRC/PRFRM Product overview: IPA60R600P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Low-Power, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R600P6 can be used for catalog matching and distributor lookup.