Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Summary of Features
Benefits
Potential Applications
Applications
Designers who used this product also designed with
MOSFETs LOW POWER_PRC/PRFRM Product overview: IPA60R600P6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Low-Power, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA60R600P6 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1185987-IPA60R600P6
Series: CoolMOS P6
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Family Name: IPA60R600P6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO-220-FP
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 557pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 28W (Tc)
Rds On (Maximum) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): STF10NM60ND; ZDX100N60; FS14KM-12A;
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA60R600P6 | 2088-IPA60R600P6 | 1185987-IPA60R600P6 | IPA60R600P6 |
| Product Name | 500V-950V N-Channel Power MOSFET | Low-Power MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R600P6 | MOSFET |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.6000 ohms | |||
| QG | 12 nC | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |