Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB055N08NF2S IPB055N08NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB055N08NF2S - IPB055N08NF2S - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPB055N08NF2S - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
Request a Quote
Datasheet
Datasheet Summary
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IPB055N08NF2S is an N-channel silicon power MOSFET in a D²PAK (PG-TO263-3) package, rated for 80 V drain-source voltage and 97 A continuous drain current at 25°C case temperature. It has a maximum on-state resistance of 5.5 mΩ at 10 V gate-source voltage and 60 A drain current, with a total gate charge of 54 nC. The device is avalanche-rated at 58 mJ and meets RoHS and halogen-free standards per IEC 61249-2-21. It is qualified according to JEDEC standards.

Datasheet Summary
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IPB055N08NF2S is an N-channel silicon power MOSFET in a D²PAK (PG-TO263-3) package, rated for 80 V drain-source voltage and 97 A continuous drain current at 25°C case temperature. It has a maximum on-state resistance of 5.5 mΩ at 10 V gate-source voltage and 60 A drain current, with a total gate charge of 54 nC. The device is avalanche-rated at 58 mJ and meets RoHS and halogen-free standards per IEC 61249-2-21. It is qualified according to JEDEC standards.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB055N08NF2S - IPB055N08NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB055N08NF2S
IPB055N08NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB055N08NF2S IPB055N08NF2S
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles

StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low- switching frequency
  • Industry standard footprint package
  • High current rating

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles
Supplier's Site Datasheet
Transistors - IPB055N08NF2S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB055N08NF2S
Transistors IPB055N08NF2S
TO-263-3 MOSFETs ROHS

TO-263-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPB055N08NF2S IPB055N08NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB055N08NF2S Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0055 ohms
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