Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA65R310CFD

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Summary of Features

• 650V technology with integrated fast body diode
• Limited voltage overshoot during hard commutation
• Significant Q_g reduction compared to 600V CFD technology
• Tighter R_DS(on) max to R_DS(on) typ window
• Easy to design-in
• Lower price compared to 600V CFD technology

Benefits

• Low switching losses due to low Q_rr at repetitive commutation on body diode
• Self limiting di/dt and dv/dt
• Low Q_oss
• Reduced turn on and turn of delay times
• Outstanding CoolMOS™ quality

Potential Applications

• Telecom
• Server
• Solar
• HID lamp ballast
• LED lighting
• eMobility

Applications

• Consumer electronics

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MOSFETs N-Ch 650V 11.4A TO220FP CoolMOS CFD2 Product overview: IPA65R310CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11.4A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA65R310CFD can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 068957-IPA65R310CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 440μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1100pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 310 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance