Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R360P7S

Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs Edge computing LED strips and signage On-board charging (OBC) for electric vehicles Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1 2
  • 500V-950V N-Channel Power MOSFET - IPA60R360P7S - Infineon Technologies AG
    Infineon Technologies AG
  • Misc Products - IPA60R360P7S - 825949-IPA60R360P7S - Win Source Electronics
    Win Source Electronics
  • Transistors - IPA60R360P7S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs Edge computing LED strips and signage On-board charging (OBC) for electric vehicles Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA60R360P7S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA60R360P7S
500V-950V N-Channel Power MOSFET IPA60R360P7S
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs Edge computing LED strips and signage On-board charging (OBC) for electric vehicles Designers who used this product also designed with IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI20I12MF | Gate driver ICs 1EDB8275F | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1 2

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor RG
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated RG reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • Complete system solutions for smart TVs
  • Edge computing
  • LED strips and signage
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • IRS4427S |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDI20I12MF |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs

1
2

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
600V Bipolar Transistor
48-IPA60R360P7S
600V Bipolar Transistor 48-IPA60R360P7S
600V CoolMOSª P7 Power Transistor Product overview: IPA60R360P7S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPA60R360P7S can be used for catalog matching and distributor lookup.

600V CoolMOSª P7 Power Transistor Product overview: IPA60R360P7S from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPA60R360P7S can be used for catalog matching and distributor lookup.

Supplier's Site
Misc Products - IPA60R360P7S - 825949-IPA60R360P7S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Misc Products - IPA60R360P7S
825949-IPA60R360P7S
Misc Products - IPA60R360P7S 825949-IPA60R360P7S
Manufacturer: Infineon Technologies Win Source Part Number: 825949-IPA60R360P7S Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 825949-IPA60R360P7S
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited

Buy Now
Transistors - IPA60R360P7S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPA60R360P7S
Transistors IPA60R360P7S
600V 9A 22W 360mΩ@10V,2.7A 4V@140uA 1 N-Channel TO-220FP MOSFETs ROHS

600V 9A 22W 360mΩ@10V,2.7A 4V@140uA 1 N-Channel TO-220FP MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Bipolar RF Transistors RF Transistors Transistors
Product Number IPA60R360P7S 48-IPA60R360P7S 825949-IPA60R360P7S IPA60R360P7S
Product Name 500V-950V N-Channel Power MOSFET 600V Bipolar Transistor Misc Products - IPA60R360P7S Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.3600 ohms
QG 13 nC
Unlock Full Specs
to access all available technical data