Infineon Technologies AG P-Channel Power MOSFET IPD11DP10NM

P-Channel MOSFETs in normal level, reducing design complexity in medium and low power applications OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. Summary of Features Available in 4 different packages Wide RDS(on) range Normal level and logic level availability Optimized for a wide range of applications Broad availability from distribution partners Benefits Industry standard package Ideal for high and low switching frequency Avalanche ruggedness Easy interface to MCU Improved efficiency at low loads due to low Qf Reduced design complexity Energy efficiency Potential Applications Battery management Industrial automation Industrial drives Applications Light electric vehicles (LEV) Designers who used this product also designed with IDL06G65C5 | CoolSiC™ Schottky Diodes IPL60R095CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs BSC035N10NS5 | N-Channel Power MOSFET IPD025N06N | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs IRF7416PBF-1 | P-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 IRLML6402 | P-Channel Power MOSFET IDL06G65C5 | CoolSiC™ Schottky Diodes IPL60R095CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs BSC035N10NS5 | N-Channel Power MOSFET IPD025N06N | N-Channel Power MOSFET 1EDN8511B | Gate driver ICs IRF7416PBF-1 | P-Channel Power MOSFET IPL65R070C7 | 600V and 650V CoolMOS™ C7 1 2 3