Infineon Technologies AG N-Channel Power MOSFET IPB032N10N5

OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB032N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications DIN rail power supplies Space applications Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Designers who used this product also designed with BSG0811ND | N-Channel Power MOSFET BAT60A | Schottky Diodes BSG0811ND | N-Channel Power MOSFET BAT60A | Schottky Diodes BSG0811ND | N-Channel Power MOSFET BAT60A | Schottky Diodes