IPB032N10N5 is a 100 V N-channel MOSFET in a PG-TO263-7 (D²PAK 7-pin) package, designed for high-frequency switching and synchronous rectification. It has a maximum drain-source on-state resistance of 3.2 mΩ at 25 °C and can handle a continuous drain current of 166 A at 25 °C case temperature. The device features a total gate charge of up to 95 nC, an avalanche energy rating of 233 mJ, and is tested for 100% avalanche robustness. It meets RoHS and IEC 61249-2-21 halogen-free requirements, and is qualified according to JEDEC standards. The thermal resistance from junction to case is 0.5 to 0.8 K/W. The gate-source voltage rating is ±20 V, and the operating junction temperature range is -55 °C to 175 °C.
OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications
OptiMOS™ 5 100V power MOSFET IPB032N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB032N10N5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0032 ohms |
