Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPAN70R360P7S

Description
Infineon's answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Adapters and chargers Wired Communication
Request a Quote Datasheet
Description
Infineon's answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Adapters and chargers Wired Communication
Request a Quote Datasheet

Suppliers

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500V-950V N-Channel Power MOSFET - IPAN70R360P7S - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPAN70R360P7S
500V-950V N-Channel Power MOSFET IPAN70R360P7S
Infineon's answer for flyback topologies Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of: Efficiency and thermals Ease-of-use EMI behavior Summary of Features Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior Allowing high speed switching Integrated protection Zener diode Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Benefits Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product Potential Applications Charger Adapter TV Lighting Audio Aux power Applications Adapters and chargers Wired Communication

Infineon's answer for flyback topologies

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

  • Efficiency and thermals
  • Ease-of-use
  • EMI behavior

Summary of Features

  • Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
  • Highly performant technology
    • Low switching losses (E oss)
    • Highly efficient
    • Excellent thermal behavior
  • Allowing high speed switching
  • Integrated protection Zener diode
  • Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
  • Finely graduated portfolio

Benefits

  • Cost competitive technology
  • Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
  • Further efficiency gain at higher switching speed
  • Supporting less magnetic size with lower BOM costs
  • High ESD ruggedness up to HBM Class 2 level
  • Easy to drive and design-in
  • Enabler for smaller form factors and high power density designs
  • Excellent choice in selecting the best fitting product

Potential Applications

  • Charger
  • Adapter
  • TV
  • Lighting
  • Audio
  • Aux power

Applications

  • Adapters and chargers
  • Wired Communication
Supplier's Site Datasheet
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Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPAN70R360P7S IPAN70R360P7S
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.3600 ohms
QG 16.4 nC
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