Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB015N06NF2S IPB015N06NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB015N06NF2S - IPB015N06NF2S - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPB015N06NF2S - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS
Request a Quote
Datasheet
Datasheet Summary
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IPB015N06NF2S is a 60 V N-channel MOSFET in a D²PAK (PG-TO263-3) package, designed for power conversion applications. It has a maximum drain current of 152 A at 100 °C case temperature, a drain-source on-state resistance of 1.5 mΩ, and an avalanche energy rating of 727 mJ. The device is rated for continuous power dissipation of 3.8 W under specified thermal conditions and supports operating temperatures from -55 °C to 175 °C. It is RoHS compliant and halogen-free per IEC61249-2-21.

Datasheet Summary
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IPB015N06NF2S is a 60 V N-channel MOSFET in a D²PAK (PG-TO263-3) package, designed for power conversion applications. It has a maximum drain current of 152 A at 100 °C case temperature, a drain-source on-state resistance of 1.5 mΩ, and an avalanche energy rating of 727 mJ. The device is rated for continuous power dissipation of 3.8 W under specified thermal conditions and supports operating temperatures from -55 °C to 175 °C. It is RoHS compliant and halogen-free per IEC61249-2-21.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB015N06NF2S - IPB015N06NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB015N06NF2S
IPB015N06NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB015N06NF2S IPB015N06NF2S
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS

StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package

Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low-switching frequency
  • Industry standard footprint through-hole package
  • High current rating
  • Capable of wave-soldering

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
Supplier's Site Datasheet
Transistors - IPB015N06NF2S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB015N06NF2S
Transistors IPB015N06NF2S
TO263-3 MOSFETs ROHS

TO263-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPB015N06NF2S IPB015N06NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB015N06NF2S Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0015 ohms
QG 155 nC
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