Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD50R3K0CEBTMA1 IPD50R3K0CEBTMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 138755-IPD50R3K0CEBTMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 18W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 30μA
Max Gate Charge: 4.3nC @ 10V
Max Input Capacitance: 84pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 400mA, 13V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

OptlMOS N-Channel Power MOSFET

N-Channel 500V 1.7A (Tc) 18W (Tc) Surface Mount PG-TO252-3

MOSFET N-CH 500V 1.7A TO252-3 Product overview: IPD50R3K0CEBTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 1.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 1.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD50R3K0CEBTMA1 can be used for catalog matching and distributor lookup.