Infineon Technologies AG N-Channel Power MOSFET IPB020N10N5

Description
OptiMOS™ 5 100 V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100 V power MOSFET IPB020N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications DIN rail power supplies Industrial robots system solutions for Industry 4.0 Light electric vehicles (LEV) Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter
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Description
OptiMOS™ 5 100 V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100 V power MOSFET IPB020N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications DIN rail power supplies Industrial robots system solutions for Industry 4.0 Light electric vehicles (LEV) Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPB020N10N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB020N10N5
N-Channel Power MOSFET IPB020N10N5
OptiMOS™ 5 100 V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100 V power MOSFET IPB020N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications DIN rail power supplies Industrial robots system solutions for Industry 4.0 Light electric vehicles (LEV) Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter

OptiMOS™ 5 100 V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications

OptiMOS™ 5 100 V power MOSFET IPB020N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.


Applications

  • DIN rail power supplies
  • Industrial robots system solutions for Industry 4.0
  • Light electric vehicles (LEV)

Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on) reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter
Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 120A D2PAK-2

MOSFET N-Ch 100V 120A D2PAK-2

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB020N10N5 IPB020N10N5
Product Name N-Channel Power MOSFET MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0020 ohms
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