Manufacturer: Infineon Technologies
Win Source Part Number: 1045745-IPA65R650CEX
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 210μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 440pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 650 mOhm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 7A TO220 Product overview: IPA65R650CEXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R650CEXKSA1
Power Field-Effect Transistor, 10.1A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistor, 10.1A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 650V 7A (Tc) 28W (Tc) Through Hole PG-TO220-3-FP
MOSFET, N-CH, 650V, 10.1A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 7A TO220
MOSFET N-CH 650V 7A TO220
| Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1045745-IPA65R650CEXKSA1 | 2605116P | 278-IPA65R650CEXKSA1 | IPA65R650CEXKSA1 | 448-IPA65R650CEXKSA1-ND | IPA65R650CEXKSA1 | 13AC9017 | IPA65R650CEXKSA1 | IPA65R650CEXKSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R650CEXKSA1 | MOSFETs | 650V 7A TO220 MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 650 volts | 650 volts | 650 volts | ||||||
| PD | 28000 milliwatts | 28 milliwatts | 28000 milliwatts | ||||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||||||
| Package Type | TO-220; SOT3; TO-220 Full Pack | TO-220; TO-220 | Tube | PG-TO22-3 | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack |
