IPB038N15NM6 is an N-channel MOSFET designed for high-efficiency power conversion in industrial applications, housed in a PG-TO263-3 (D²PAK) package. It has a maximum drain-source voltage of 150 V, a maximum continuous drain current of 156 A at 25 °C, and a maximum on-resistance of 3.8 mΩ. The device is avalanche-tested with a single-pulse avalanche energy rating of 503 mJ at 51 A and a gate-source voltage range of −20 V to +20 V. Thermal resistance from junction to case is 0.51 °C/W, and junction temperature operates from −55 °C to 175 °C. It is RoHS compliant, halogen-free per IEC61249-2-21, and fully qualified per JEDEC for industrial use.
IPB038N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB038N15NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB038N15NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0038 ohms |
