IPB018N06NF2S is a 60 V N-channel power MOSFET in a D²PAK (PG-TO263-3) package with a maximum continuous drain current of 147 A at 100 °C case temperature and a drain-source on-resistance of 1.8 mΩ at 10 V gate voltage. It is rated for 191 A pulsed drain current and 349 mJ single-pulse avalanche energy. Thermal resistance from junction to case is 0.65 °C/W, and junction-to-ambient is 40 °C/W on a 6 cm² copper area. The device is qualified to JEDEC standards, RoHS compliant, and halogen-free per IEC 61249-2-21.
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 1.8 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | IPB018N06NF2S | IPB018N06NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB018N06NF2S | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0018 ohms | |
| QG | 108 nC |
