Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPD029N04NF2S IPD029N04NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 40 V in DPAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 2.9 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPD029N04NF2S - IPD029N04NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 40 V in DPAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 2.9 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS
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Datasheet
Datasheet Summary
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IPD029N04NF2S is a 40 V N-channel power MOSFET in a PG-TO252-3 package, rated for a continuous drain current of 100 A at 100 °C case temperature and a pulsed drain current of 524 A. It has a maximum on-state resistance of 2.9 mΩ, a total gate charge of 45 nC, and is 100% avalanche tested with a single-pulse avalanche energy rating of 71 mJ. The device is RoHS compliant and halogen-free per IEC61249-2-21, with an operating junction temperature range from -55 °C to 175 °C.

Datasheet Summary
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IPD029N04NF2S is a 40 V N-channel power MOSFET in a PG-TO252-3 package, rated for a continuous drain current of 100 A at 100 °C case temperature and a pulsed drain current of 524 A. It has a maximum on-state resistance of 2.9 mΩ, a total gate charge of 45 nC, and is 100% avalanche tested with a single-pulse avalanche energy rating of 71 mJ. The device is RoHS compliant and halogen-free per IEC61249-2-21, with an operating junction temperature range from -55 °C to 175 °C.

Suppliers

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPD029N04NF2S - IPD029N04NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPD029N04NF2S
IPD029N04NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPD029N04NF2S IPD029N04NF2S
StrongIRFET™ 2 single N-channel power MOSFET 40 V in DPAK package Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 2.9 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low-switching frequency Industry standard footprint through-hole package High current rating Capable of wave-soldering Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Ease of manufacturing Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS

StrongIRFET™ 2 single N-channel power MOSFET 40 V in DPAK package

Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 2.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low-switching frequency
  • Industry standard footprint through-hole package
  • High current rating
  • Capable of wave-soldering

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability
  • Ease of manufacturing

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPD029N04NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPD029N04NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0029 ohms
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