IPB013N06NF2S is a 60 V N-channel power MOSFET in a D²PAK (PG-TO263-3) package, designed for high-current switching applications. It has a maximum drain-source on-state resistance of 1.3 mΩ at 10 V gate-source voltage and 25 °C, with a continuous drain current rating of 155 A at 100 °C case temperature and 200 A pulsed current. The device supports avalanche energy up to 1274 mJ at 100 A and has a junction-to-case thermal resistance of 0.4 °C/W. It is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified to JEDEC standards. The package measures 9.65 mm × 10.67 mm with a lead spacing of 2.54 mm and a height of up to 15.88 mm.
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package
Infineon's StrongIRFET™ 2 power MOSFET 60 V features lowest RDS(on) of 1.3 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB013N06NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB013N06NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0013 ohms |
| QG | 203 nC |
