Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB024N08NF2S IPB024N08NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB024N08NF2S - IPB024N08NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles
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Datasheet
Datasheet Summary
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IPB024N08NF2S is an N-channel power MOSFET with an 80 V drain-source breakdown voltage and a maximum on-state resistance of 2.4 mΩ, housed in a PG-TO263-3 (D²PAK) package measuring 9.65 mm by 10.67 mm. It supports a continuous drain current of 188 A at 25°C case temperature, with a pulse current rating of 428 A and single-pulse avalanche energy capability of 119 mJ. The device is RoHS compliant, halogen-free according to IEC 61249-2-21, and qualified per JEDEC standards. Thermal resistance from junction to case is 1.0 °C/W, and its operating junction temperature ranges from -55 °C to 175 °C.

Datasheet Summary
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IPB024N08NF2S is an N-channel power MOSFET with an 80 V drain-source breakdown voltage and a maximum on-state resistance of 2.4 mΩ, housed in a PG-TO263-3 (D²PAK) package measuring 9.65 mm by 10.67 mm. It supports a continuous drain current of 188 A at 25°C case temperature, with a pulse current rating of 428 A and single-pulse avalanche energy capability of 119 mJ. The device is RoHS compliant, halogen-free according to IEC 61249-2-21, and qualified per JEDEC standards. Thermal resistance from junction to case is 1.0 °C/W, and its operating junction temperature ranges from -55 °C to 175 °C.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB024N08NF2S - IPB024N08NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB024N08NF2S
IPB024N08NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB024N08NF2S IPB024N08NF2S
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles

StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package

Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 2.4 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low- switching frequency
  • Industry standard footprint package
  • High current rating

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB024N08NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB024N08NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0024 ohms
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