Win Source Part Number: 1153218-IPB032N10N5A
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Power Dissipation (Max): 187W (Tc)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package: PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPB032N10N5;
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB032N10N5ATMA1-ND,
Base Product Number: IPB032
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 100V 166A TO263-7 Product overview: IPB032N10N5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 166A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 166A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB032N10N5ATMA1
N-Channel 100V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7
N-Channel 100V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7
N-Channel 100V 166A (Tc) 187W (Tc) Surface Mount PG-TO263-7
IPB032N10N5 - OptiMOS 5 100V power MOSFET
MOSFET DIFFERENTIATED MOSFETS
MOSFET SINGLE, 166A, 100V, 187W, TO-263 ROHS COMPLIANT: YES
MOSFET N-CH 100V 166A TO263-7
MOSFET N-CH 100V 166A TO263-7
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1153218-IPB032N10N5ATMA1 | 278-IPB032N10N5ATMA1 | IPB032N10N5ATMA1CT-ND | IPB032N10N5ATMA1 | 2583791P | IPB032N10N5ATMA1 | 25AK0787 | IPB032N10N5ATMA1 | IPB032N10N5ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 100V 166A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFET | Mosfet Single, 166A, 100V, 187W, To-263 Rohs Compliant Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| PD | 187000 milliwatts | 187 milliwatts | 187000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | SOT3 | Tape & Reel (TR) | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | PG-TO263-7 | TO-263; TO-263 | TO-3; TO-263 | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 95 nC @ 10 V | |
| MOSFET Operating Mode | Enhancement |
