The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
Lower R DS(on) without compromising FOM gd and FOM oss
Lower output charge
Ultra-low reverse recovery charge
Increased commutation ruggedness
Higher switching frequency possible
Benefits
Reduced paralleling
Size reduction enabled with SuperSO8 best-in-class
Higher power density designs
More rugged products
System cost reduction
Improved EMI behavior
Potential Applications
Low voltage drives
Telecom
Solar
Applications
48 V intermediate bus converter (IBC)
DIN rail power supplies
Light electric vehicles (LEV)
Telecommunication infrastructure
Designers who used this product also designed with
IPD30N12S3L-31 | Automotive MOSFET
BSS131 | Small signal/small power MOSFET
1EDI20N12AF | Gate driver ICs
2EDL23N06PJ | Gate driver ICs
IPD30N12S3L-31 | Automotive MOSFET
BSS131 | Small signal/small power MOSFET
1EDI20N12AF | Gate driver ICs
2EDL23N06PJ | Gate driver ICs
IPD30N12S3L-31 | Automotive MOSFET
BSS131 | Small signal/small power MOSFET
1EDI20N12AF | Gate driver ICs
2EDL23N06PJ | Gate driver ICs
The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.
Summary of Features
- Lower R DS(on) without compromising FOM gd and FOM oss
- Lower output charge
- Ultra-low reverse recovery charge
- Increased commutation ruggedness
- Higher switching frequency possible
Benefits
- Reduced paralleling
- Size reduction enabled with SuperSO8 best-in-class
- Higher power density designs
- More rugged products
- System cost reduction
- Improved EMI behavior
Potential Applications
- Low voltage drives
- Telecom
- Solar
Applications
- 48 V intermediate bus converter (IBC)
- DIN rail power supplies
- Light electric vehicles (LEV)
- Telecommunication infrastructure
Designers who used this product also designed with
- IPD30N12S3L-31 |
Automotive MOSFET
- BSS131 |
Small signal/small power MOSFET
- 1EDI20N12AF |
Gate driver ICs
- 2EDL23N06PJ |
Gate driver ICs
- IPD30N12S3L-31 |
Automotive MOSFET
- BSS131 |
Small signal/small power MOSFET
- 1EDI20N12AF |
Gate driver ICs
- 2EDL23N06PJ |
Gate driver ICs
- IPD30N12S3L-31 |
Automotive MOSFET
- BSS131 |
Small signal/small power MOSFET
- 1EDI20N12AF |
Gate driver ICs
- 2EDL23N06PJ |
Gate driver ICs
