Power Field-Effect Transistor, 41A I(D), 150V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
TRENCH >=100V PG-TO263-3 Product overview: IPB720P15LMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB720P15LMATMA1
P-Channel 150V 4.6A (Ta), 41A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3
P-Channel 150V 4.6A (Ta), 41A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3
P-Channel 150V 4.6A (Ta), 41A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3
Win Source Part Number: 1351359-IPB720P15LMA
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 150 V
Power Dissipation (Max): 3.8W (Ta) , 300W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: PG-TO263-3
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPB720P
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) , 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
MOSFET, P-CH, 150V, TO-263-3 ROHS COMPLIANT: YES
TRENCH >=100V PG-TO263-3
TRENCH >=100V PG-TO263-3
| Rochester Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPB720P15LMATMA1 | 2354851 | 278-IPB720P15LMATMA1 | 448-IPB720P15LMATMA1DKR-ND | 1351359-IPB720P15LMATMA1 | 90AJ6110 | IPB720P15LMATMA1 | IPB720P15LMATMA1 |
| Product Name | MOSFETs | 100V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Mosfet, P-Ch, 150V, To-263-3 Rohs Compliant Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| rDS(on) | 0.0720 ohms | |||||||
| Package Type | PG-TO263-3 | TO-263; TO-263 | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | TO-3; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| MOSFET Operating Mode | Enhancement |
