Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPB80N06S405ATMA2

Power Field-Effect Transistor, 80A I(D), 60V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Win Source Part Number: 979058-IPB80N06S405ATMA2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 107W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001028718
Base Product Number: IPB80N
Drive Voltage (Max Rds On, Min Rds On): 10V

MOSFET N-CH 60V 80A TO263-3

MOSFET N-CH 60V 80A TO263-3

N-Channel 60V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2