Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA80R600P7

Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications Consumer electronics Cordless vacuum cleaners
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Description
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications Consumer electronics Cordless vacuum cleaners
Request a Quote
Datasheet
Datasheet Summary
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The IPA80R600P7 is an 800V N-channel MOSFET designed for hard and soft switching applications in low-power SMPS, such as LED lighting, chargers, adapters, and industrial power supplies. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67-16.15 mm in length and 10.00-10.65 mm in width. The device has a maximum drain-source breakdown voltage of 800 V, a drain-source on-state resistance of 0.60 Ω, a continuous drain current of 8 A at 25°C case temperature, and an integrated Zener diode for ESD protection rated at Class 2 (HBM). It is fully qualified according to JEDEC for industrial applications. Thermal resistance from junction to case is 4.5°C/W, and junction temperature operates from -55°C to 150°C.

Datasheet Summary
Powered by GS/AI

The IPA80R600P7 is an 800V N-channel MOSFET designed for hard and soft switching applications in low-power SMPS, such as LED lighting, chargers, adapters, and industrial power supplies. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67-16.15 mm in length and 10.00-10.65 mm in width. The device has a maximum drain-source breakdown voltage of 800 V, a drain-source on-state resistance of 0.60 Ω, a continuous drain current of 8 A at 25°C case temperature, and an integrated Zener diode for ESD protection rated at Class 2 (HBM). It is fully qualified according to JEDEC for industrial applications. Thermal resistance from junction to case is 4.5°C/W, and junction temperature operates from -55°C to 150°C.

Suppliers

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Supplier Links
500V-950V N-Channel Power MOSFET - IPA80R600P7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA80R600P7
500V-950V N-Channel Power MOSFET IPA80R600P7
A new benchmark in efficiency and thermal performance 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort. Summary of Features Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss Best-in-class DPAK R DS(on) of 280mΩ Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio Benefits 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential Applications Adapter LED Audio Industrial SMPS AUX power Applications Consumer electronics Cordless vacuum cleaners

A new benchmark in efficiency and thermal performance

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.

This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.


Summary of Features

  • Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
  • Best-in-class DPAK R DS(on) of 280mΩ
  • Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability
  • Fully optimized portfolio

Benefits

  • 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns
  • Easy to select right parts for fine tuning of designs

Potential Applications

  • Adapter
  • LED
  • Audio
  • Industrial SMPS
  • AUX power

Applications

  • Consumer electronics
  • Cordless vacuum cleaners
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPA80R600P7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.6000 ohms
QG 20 nC
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