The IPA80R600P7 is an 800V N-channel MOSFET designed for hard and soft switching applications in low-power SMPS, such as LED lighting, chargers, adapters, and industrial power supplies. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67-16.15 mm in length and 10.00-10.65 mm in width. The device has a maximum drain-source breakdown voltage of 800 V, a drain-source on-state resistance of 0.60 Ω, a continuous drain current of 8 A at 25°C case temperature, and an integrated Zener diode for ESD protection rated at Class 2 (HBM). It is fully qualified according to JEDEC for industrial applications. Thermal resistance from junction to case is 4.5°C/W, and junction temperature operates from -55°C to 150°C.
A new benchmark in efficiency and thermal performance
800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Summary of Features
Benefits
Potential Applications
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPA80R600P7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.6000 ohms |
| QG | 20 nC |