Power Field-Effect Transistor, 12A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 650V 12A TO220-FP Product overview: IPA65R095C7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 12A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 12A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R095C7XKSA1
N-Channel 650V 12A (Tc) 34W (Tc) Through Hole PG-TO220-FP
MOSFET N-CH 650V 12A TO220-FP
MOSFET HIGH POWER BEST IN CLASS
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA65R095C7XKSA1 | 278-IPA65R095C7XKSA1 | IPA65R095C7XKSA1-ND | IPA65R095C7XKSA1 | IPA65R095C7XKSA1 |
| Product Name | 650V 12A TO220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| rDS(on) | 0.0950 ohms | ||||
| Package Type | PG-TO22-3 | Tube | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | |
| Packing Method | Tube; Tube | Tube | Tube; Tube |
