N-Channel 650V 12A (Tc) 34W (Tc) Through Hole PG-TO220-FP
Power Field-Effect Transistor, 12A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 650V 12A TO220-FP Product overview: IPA65R095C7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 12A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 12A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA65R095C7XKSA1
MOSFET HIGH POWER BEST IN CLASS
MOSFET N-CH 650V 12A TO220-FP
| DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPA65R095C7XKSA1-ND | IPA65R095C7XKSA1 | 278-IPA65R095C7XKSA1 | IPA65R095C7XKSA1 | IPA65R095C7XKSA1 |
| Product Name | Single FETs, MOSFETs | 650V 12A TO220 MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 Full Pack | PG-TO22-3 | Tube | TO-220; TO-220-3 Full Pack | |
| rDS(on) | 0.0950 ohms | ||||
| Packing Method | Tube; Tube | Tube | Tube; Tube |
