Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD50R280CE

Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications DIN rail power supplies LED strips and signage Traction Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRFR5305 | P-Channel Power MOSFET FF450R33T3E3 | IGBT modules 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRFR5305 | P-Channel Power MOSFET FF450R33T3E3 | IGBT modules 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2
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Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications DIN rail power supplies LED strips and signage Traction Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRFR5305 | P-Channel Power MOSFET FF450R33T3E3 | IGBT modules 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRFR5305 | P-Channel Power MOSFET FF450R33T3E3 | IGBT modules 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD50R280CE - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD50R280CE
500V-950V N-Channel Power MOSFET IPD50R280CE
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Applications DIN rail power supplies LED strips and signage Traction Designers who used this product also designed with 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRFR5305 | P-Channel Power MOSFET FF450R33T3E3 | IGBT modules 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs IRFR5305 | P-Channel Power MOSFET FF450R33T3E3 | IGBT modules 1ED44171N01B | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.


Summary of Features

  • Reduced energy stored in output capacitance (E oss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Q rr )
  • Reduced gate charge (Q g )

Benefits

  • Easy control of switching behavior
  • Better light load efficiency compared to previous CoolMOS™ generations
  • Cost attractive alternative compared to standard MOSFETs
  • Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

  • Consumer
  • Lighting
  • PC silverbox

Applications

  • DIN rail power supplies
  • LED strips and signage
  • Traction

Designers who used this product also designed with


  • 1ED44171N01B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IRFR5305 |
    P-Channel Power MOSFET
  • FF450R33T3E3 |
    IGBT modules
  • 1ED44171N01B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IRFR5305 |
    P-Channel Power MOSFET
  • FF450R33T3E3 |
    IGBT modules
  • 1ED44171N01B |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs

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Supplier's Site Datasheet
Electronic Surplus - IPD50R280CE - 1186152-IPD50R280CE - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IPD50R280CE
1186152-IPD50R280CE
Electronic Surplus - IPD50R280CE 1186152-IPD50R280CE
Manufacturer: Infineon Technologies Win Source Part Number: 1186152-IPD50R280CE Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186152-IPD50R280CE
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Power MOSFET Power MOSFET
Product Number IPD50R280CE 1186152-IPD50R280CE
Product Name 500V-950V N-Channel Power MOSFET Electronic Surplus - IPD50R280CE
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.2800 ohms
QG 32.6 nC
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