Infineon Technologies AG N-Channel Power MOSFET IPB017N10N5LF

Description
Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.� Summary of Features Combination of low R DS(on) and wide safe operating area (SOA) High max. pulse current High continuous pulse current� Benefits Rugged linear mode operation Low conduction losses� Higher in-rush current enabled for faster start-up and shorter down time Potential Applications Telecom Battery management Applications 48 V intermediate bus converter (IBC) Automotive telematics control unit (TCU) Body electronics and power distribution Industrial robots system solutions for Industry 4.0 Telecommunication infrastructure Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21535 | Integrated Smart Power Stages BSS214N | Small signal/small power MOSFET TDA21570 | Integrated Smart Power Stages BSC047N08NS3 G | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET BSC014N04LSI | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET 2EDF7275K | Gate driver ICs IRS21271S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21535 | Integrated Smart Power Stages BSS214N | Small signal/small power MOSFET TDA21570 | Integrated Smart Power Stages 1 2 3 4
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Description
Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.� Summary of Features Combination of low R DS(on) and wide safe operating area (SOA) High max. pulse current High continuous pulse current� Benefits Rugged linear mode operation Low conduction losses� Higher in-rush current enabled for faster start-up and shorter down time Potential Applications Telecom Battery management Applications 48 V intermediate bus converter (IBC) Automotive telematics control unit (TCU) Body electronics and power distribution Industrial robots system solutions for Industry 4.0 Telecommunication infrastructure Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21535 | Integrated Smart Power Stages BSS214N | Small signal/small power MOSFET TDA21570 | Integrated Smart Power Stages BSC047N08NS3 G | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET BSC014N04LSI | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET 2EDF7275K | Gate driver ICs IRS21271S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21535 | Integrated Smart Power Stages BSS214N | Small signal/small power MOSFET TDA21570 | Integrated Smart Power Stages 1 2 3 4
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Suppliers

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N-Channel Power MOSFET - IPB017N10N5LF - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB017N10N5LF
N-Channel Power MOSFET IPB017N10N5LF
Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.� Summary of Features Combination of low R DS(on) and wide safe operating area (SOA) High max. pulse current High continuous pulse current� Benefits Rugged linear mode operation Low conduction losses� Higher in-rush current enabled for faster start-up and shorter down time Potential Applications Telecom Battery management Applications 48 V intermediate bus converter (IBC) Automotive telematics control unit (TCU) Body electronics and power distribution Industrial robots system solutions for Industry 4.0 Telecommunication infrastructure Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21535 | Integrated Smart Power Stages BSS214N | Small signal/small power MOSFET TDA21570 | Integrated Smart Power Stages BSC047N08NS3 G | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET BSC014N04LSI | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET 2EDF7275K | Gate driver ICs IRS21271S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module TDA21535 | Integrated Smart Power Stages BSS214N | Small signal/small power MOSFET TDA21570 | Integrated Smart Power Stages 1 2 3 4

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.�


Summary of Features

  • Combination of low R DS(on) and wide safe operating area (SOA)
  • High max. pulse current
  • High continuous pulse current�

Benefits

  • Rugged linear mode operation
  • Low conduction losses�
  • Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

  • Telecom
  • Battery management

Applications

  • 48 V intermediate bus converter (IBC)
  • Automotive telematics control unit (TCU)
  • Body electronics and power distribution
  • Industrial robots system solutions for Industry 4.0
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 2EDL8033G4B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • OPTIGA TPM SLB 9672 FW15
    OPTIGA™ TPM - Trusted Platform Module
  • TDA21535 |
    Integrated Smart Power Stages
  • BSS214N |
    Small signal/small power MOSFET
  • TDA21570 |
    Integrated Smart Power Stages
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • BSC032N04LS |
    N-Channel Power MOSFET
  • BSC014N04LSI |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • 2EDF7275K |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • OPTIGA TPM SLB 9672 FW15
    OPTIGA™ TPM - Trusted Platform Module
  • TDA21535 |
    Integrated Smart Power Stages
  • BSS214N |
    Small signal/small power MOSFET
  • TDA21570 |
    Integrated Smart Power Stages

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB017N10N5LF
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0017 ohms
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