Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3GXKSA1 IPA032N06N3GXKSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 776830-IPA032N06N3GX KSA1 Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Family Name: IPA032N06N3GXKSA1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TO220-3-31 Full Pack Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 4V @ 118μA Gate Charge (Qg) (Maximum) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13000pF @ 30V Vgs (Maximum): ±20V Power Dissipation (Maximum): 41W (Tc) Rds On (Maximum) @ Id, Vgs: 3.2 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): AP9970GI-HF; TK100A06N1; TK100A06N1,S4X; TK100A06N1,S4X(S; Introduction Date: May 03, 2010 ECCN: EAR99 Country of Origin: Austria, China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 776830-IPA032N06N3GX KSA1 Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Family Name: IPA032N06N3GXKSA1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TO220-3-31 Full Pack Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 4V @ 118μA Gate Charge (Qg) (Maximum) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13000pF @ 30V Vgs (Maximum): ±20V Power Dissipation (Maximum): 41W (Tc) Rds On (Maximum) @ Id, Vgs: 3.2 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): AP9970GI-HF; TK100A06N1; TK100A06N1,S4X; TK100A06N1,S4X(S; Introduction Date: May 03, 2010 ECCN: EAR99 Country of Origin: Austria, China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3GXKSA1 - 776830-IPA032N06N3GXKSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3GXKSA1
776830-IPA032N06N3GXKSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3GXKSA1 776830-IPA032N06N3GXKSA1
Manufacturer: Infineon Technologies Win Source Part Number: 776830-IPA032N06N3GX KSA1 Series: OptiMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Family Name: IPA032N06N3GXKSA1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TO220-3-31 Full Pack Channel Type Type: N Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 4V @ 118μA Gate Charge (Qg) (Maximum) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13000pF @ 30V Vgs (Maximum): ±20V Power Dissipation (Maximum): 41W (Tc) Rds On (Maximum) @ Id, Vgs: 3.2 mOhm @ 80A, 10V Alternative Parts (Cross-Reference): AP9970GI-HF; TK100A06N1; TK100A06N1,S4X; TK100A06N1,S4X(S; Introduction Date: May 03, 2010 ECCN: EAR99 Country of Origin: Austria, China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 776830-IPA032N06N3GXKSA1
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Family Name: IPA032N06N3GXKSA1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO220-3-31 Full Pack
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 4V @ 118μA
Gate Charge (Qg) (Maximum) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 13000pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 41W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.2 mOhm @ 80A, 10V
Alternative Parts (Cross-Reference): AP9970GI-HF; TK100A06N1; TK100A06N1,S4X; TK100A06N1,S4X(S;
Introduction Date: May 03, 2010
ECCN: EAR99
Country of Origin: Austria, China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
 - IPA032N06N3GXKSA1 - Rochester Electronics
Newburyport, MA, United States
XPA032N06 - MOSFET N-Channel Single 60V 84A (Tc)

XPA032N06 - MOSFET N-Channel Single 60V 84A (Tc)

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IPA032N06N3GXKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPA032N06N3GXKSA1-ND
Single FETs, MOSFETs 448-IPA032N06N3GXKSA1-ND
N-Channel 60V 84A (Tc) 41W (Tc) Through Hole PG-TO220-3-31

N-Channel 60V 84A (Tc) 41W (Tc) Through Hole PG-TO220-3-31

Buy Now Datasheet
Singapore, Singapore
60V 84A TO220 MOSFET Transistor
278-IPA032N06N3GXKSA1
60V 84A TO220 MOSFET Transistor 278-IPA032N06N3GXKSA1
MOSFET N-CH 60V 84A TO220-3-31 Product overview: IPA032N06N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 84A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 84A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA032N06N3GXKSA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 84A TO220-3-31 Product overview: IPA032N06N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 84A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 84A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA032N06N3GXKSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS? Power Mosfet - TO-220-3FP - 376-IPA032N06N3GXKSA1 - Utmel Electronic Limited
Hong Kong, China
Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS? Power Mosfet - TO-220-3FP
376-IPA032N06N3GXKSA1
Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS? Power Mosfet - TO-220-3FP 376-IPA032N06N3GXKSA1
Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS? Power Mosfet - TO-220-3FP

Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS? Power Mosfet - TO-220-3FP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPA032N06N3GXKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPA032N06N3GXKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPA032N06N3GXKSA1
MOSFET N-CH 60V 84A TO220-3-31

MOSFET N-CH 60V 84A TO220-3-31

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 776830-IPA032N06N3GXKSA1 IPA032N06N3GXKSA1 448-IPA032N06N3GXKSA1-ND 278-IPA032N06N3GXKSA1 376-IPA032N06N3GXKSA1 IPA032N06N3GXKSA1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3GXKSA1 Single FETs, MOSFETs 60V 84A TO220 MOSFET Transistor Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS? Power Mosfet - TO-220-3FP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 41000 milliwatts 41000 milliwatts 41000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3 PG-TO22-3 TO-220; TO-220-3 Full Pack Tube TO-220; TO-220-3 Full Pack
Packing Method Tube; Tube Tube; Tube Tube Tube; Tube Tube; Tube
Polarity N-Channel N-Channel N-Channel
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