Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R120P7

Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs Edge computing LED strips and signage Washing and drying EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1 2 3
Request a Quote Datasheet
Description
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs Edge computing LED strips and signage Washing and drying EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1 2 3
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Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA60R120P7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA60R120P7
500V-950V N-Channel Power MOSFET IPA60R120P7
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency. Summary of Features Efficiency 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG Ease-of-use ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor RG Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Benefits Efficiency Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency Ease-of-use Ease-of-use in manufacturing environments by stopping ESD failures occurring Integrated RG reduces MOSFET oscillation sensitivity MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC Excellent ruggedness during hard commutation of the body diode seen in LLC topology Suitable for a wide variety of end applications and output powers Parts available suitable for consumer and industrial applications Potential Applications TV power supply Industrial SMPS Server Telecom Lighting Applications Complete system solutions for smart TVs Edge computing LED strips and signage Washing and drying EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDB8275F | Gate driver ICs 1EDI20N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1 2 3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.


Summary of Features

Efficiency

  • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

Ease-of-use

  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor RG
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

Efficiency

  • Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use

  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated RG reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Potential Applications

  • TV power supply
  • Industrial SMPS
  • Server
  • Telecom
  • Lighting

Applications

  • Complete system solutions for smart TVs
  • Edge computing
  • LED strips and signage
  • Washing and drying

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IPA083N10N5 |
    N-Channel Power MOSFET
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDB8275F |
    Gate driver ICs
  • 1EDI20N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • IPA083N10N5 |
    N-Channel Power MOSFET
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED44171N01B |
    Gate driver ICs

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Supplier's Site Datasheet
Singapore
600V Bipolar Transistor
48-IPA60R120P7
600V Bipolar Transistor 48-IPA60R120P7
600V CoolMOSª P7 Power Transistor Product overview: IPA60R120P7 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPA60R120P7 can be used for catalog matching and distributor lookup.

600V CoolMOSª P7 Power Transistor Product overview: IPA60R120P7 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPA60R120P7 can be used for catalog matching and distributor lookup.

Supplier's Site
Misc Products - IPA60R120P7 - 825945-IPA60R120P7 - Win Source Electronics
Laguna Hills, CA, United States
Misc Products - IPA60R120P7
825945-IPA60R120P7
Misc Products - IPA60R120P7 825945-IPA60R120P7
Manufacturer: Infineon Technologies Win Source Part Number: 825945-IPA60R120P7 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 825945-IPA60R120P7
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Power MOSFET Bipolar RF Transistors RF Transistors
Product Number IPA60R120P7 48-IPA60R120P7 825945-IPA60R120P7
Product Name 500V-950V N-Channel Power MOSFET 600V Bipolar Transistor Misc Products - IPA60R120P7
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1200 ohms
QG 36 nC
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