Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R120P7

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R_onxA and the inherently low gate charge (Q_G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features

Efficiency

• 600V P7 enables excellent FOM R_DS(on)xE_oss and R_DS(on)xQ_G

Ease-of-use

• ESD ruggedness of ≥ 2kV (HBM class 2)
• Integrated gate resistor R_G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

Benefits

Efficiency

• Excellent FOMs R_DS(on)xQ_G / R_DS(on)xE_oss enable higher efficiency

Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R_G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

Potential Applications

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

Applications

• Complete system solutions for smart TVs
• Edge computing
• LED strips and signage
• Washing and drying

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 1EDI20N12AF |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• IPA083N10N5 |
  N-Channel Power MOSFET
• ICE3PCS03G |
  PFC-CCM (continuous conduction mode) ICs
• IRS4427S |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs
• 1ED44173N01B |
  Gate driver ICs
• 1EDB8275F |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• IPA083N10N5 |
  N-Channel Power MOSFET
• ICE3PCS03G |
  PFC-CCM (continuous conduction mode) ICs
• IRS4427S |
  Gate driver ICs
• 1ED44171N01B |
  Gate driver ICs

1
2
3

Manufacturer: Infineon Technologies
Win Source Part Number: 825945-IPA60R120P7
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited

600V CoolMOSª P7 Power Transistor Product overview: IPA60R120P7 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPA60R120P7 can be used for catalog matching and distributor lookup.