Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features
Efficiency
Ease-of-use
Benefits
Efficiency
Ease-of-use
Potential Applications
Applications
EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs
Download Gate Driver ICs overview
Designers who used this product also designed with
1
2
3
600V CoolMOSª P7 Power Transistor Product overview: IPA60R120P7 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPA60R120P7 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 825945-IPA60R120P7
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|
| Product Category | Power MOSFET | Bipolar RF Transistors | RF Transistors |
| Product Number | IPA60R120P7 | 48-IPA60R120P7 | 825945-IPA60R120P7 |
| Product Name | 500V-950V N-Channel Power MOSFET | 600V Bipolar Transistor | Misc Products - IPA60R120P7 |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| rDS(on) | 0.1200 ohms | ||
| QG | 36 nC |