The IPA60R280CFD7 is a 600V CoolMOS™ CFD7 power MOSFET designed for resonant topologies such as phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging applications. It features an ultra-fast body diode, best-in-class reverse recovery charge (Qrr) of 0.29 to 0.58 µC, and a low gate charge (Qg) of 18 nC. The device has a maximum RDS(on) of 280 mΩ and can handle a pulsed drain current of 31 A. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67-16.15 mm in length and 10.00-10.65 mm in width. The MOSFET is fully qualified according to JEDEC for industrial applications and supports a maximum junction temperature of 150°C. Thermal resistance from junction to case is 5.31 °C/W.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPA60R280CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.2800 ohms |
| QG | 18 nC |
