Infineon Technologies AG Single FETs, MOSFETs IPD12CN10N

N-CHANNEL POWER MOSFET

Win Source Part Number: 1378626-IPD12CN10N Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Series: OptiMOS™ Package: Bulk Product Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3-313 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V Power Dissipation (Max): 125W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: Vendor Undefined ECCN: EAR99