IPA50R280CE is a 500V CoolMOS™ CE N-channel power MOSFET designed for cost-sensitive consumer and lighting applications, offering high efficiency and ease of use. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67-16.15 mm in length and 10.00-10.65 mm in width. The device has a maximum drain-source breakdown voltage of 500 V, a drain-source on-state resistance of 0.28 Ω, and a continuous drain current of 18.1 A at 25°C junction temperature. It supports a pulsed drain current of 42.9 A, has a gate charge of 32.6 nC, and an output capacitance energy of 3.2 μJ at 400 V. The MOSFET is qualified for standard grade applications and meets RoHS requirements with lead-free plating and halogen-free mold compound.
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
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MOSFET N-CH 500V 13A TO220-FP Product overview: IPA50R280CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 13A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 13A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA50R280CE can be used for catalog matching and distributor lookup.
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N-Channel 500V 13A (Tc) 30.4W (Tc) Through Hole PG-TO220-3-31
Integrated Circuits (ICs) - Transistors - MOSFETs
MOSFET N-CH 500V 13A TO220-FP
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA50R280CE | 278-IPA50R280CE | 8977501 | IPA50R280CEIN-ND | IPA50R280CE | IPA50R280CE |
| Product Name | 500V-950V N-Channel Power MOSFET | 500V 13A TO220 MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Integrated Circuits (ICs) - Transistors - MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | ||||
| rDS(on) | 0.2800 ohms | |||||
| QG | 32.6 nC | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
