Infineon Technologies AG BUZ73AIN

N-channel MOSFET designed for power switching applications, available in a PG-TO-220-3 package. It has a continuous drain current of 5.5 A, a drain-source breakdown voltage of 200 V, and a maximum drain-source on-resistance of 0.6 Ω at 10 V gate-source voltage. The device is avalanche-rated with a single-pulse avalanche energy of 120 mJ and operates over a junction temperature range of -55 °C to +150 °C. It meets IEC climatic category 55/150/56 and is Pb-free. Thermal resistance from junction to case is 3.1 K/W.