The IPD60R170CFD7 is a 600V superjunction MOSFET with an integrated ultra-fast body diode, designed for resonant topologies such as phase-shift full-bridge and LLC converters in server, telecom, and EV charging applications. It is packaged in a PG-TO252-3 (DPAK) surface-mount case. The device features a maximum on-state resistance of 170 mΩ, a gate charge of 28 nC, and a reverse recovery charge of 0.68 µC. It supports a pulsed drain current of 51 A and a maximum junction temperature of 150°C. The MOSFET meets JEDEC industrial reliability standards and exhibits best-in-class reverse recovery performance and hard commutation ruggedness.
Infineon’s answer to resonant high power topologies
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Summary of Features
Benefits
Potential Applications
Server, Telecom, EV-charging, SMPS, PC power
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPD60R170CFD7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1700 ohms |
| QG | 28 nC |
