MOSFET N-CH 60V 34A/180A TO263-7 Product overview: IPB014N06NATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 34A, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 34A, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB014N06NATMA1 can be used for catalog matching and distributor lookup.
IPB014N06N - 12V-300V N-Channel Power MOSFET
N-Channel 60V 34A (Ta), 180A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 34A (Ta), 180A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 34A (Ta), 180A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TO263-7
Manufacturer: Infineon Technologies
Win Source Part Number: 776842-IPB014N06NATM
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Family Name: IPB014N06N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO263-7
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.8V @ 143μA
Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7800pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3W (Ta), 214W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.4 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): FDB0170N607L; STH265N6F6-6AG;
Introduction Date: February 06, 2012
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 60V, 180A, TO-263-7; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-CH 60V 34A/180A TO263-7
MOSFET N-CH 60V 34A/180A TO263-7
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB014N06NATMA1 | IPB014N06NATMA1 | IPB014N06NATMA1TR-ND | 776842-IPB014N06NATMA1 | 2591541 | 97Y1819 | IPB014N06NATMA1 | IPB014N06NATMA1 | IPB014N06NATMA1 |
| Product Name | 60V 34A 180A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB014N06NATMA1 | MOSFETs | Mosfet, N-Ch, 60V, 180A, To-263-7; Channel Type Infineon | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 60 volts | 60 volts | |||||||
| Transconductance | 0.1200 kS | ||||||||
| PD | 214 milliwatts | 3000 to 214000 milliwatts | 3000 milliwatts |
