Manufacturer: Infineon Technologies
Win Source Part Number: 776842-IPB014N06NATM
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-7, D2Pak (6 Leads + Tab)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Family Name: IPB014N06N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO263-7
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.8V @ 143μA
Gate Charge (Qg) (Maximum) @ Vgs: 106nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7800pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3W (Ta), 214W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.4 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): FDB0170N607L; STH265N6F6-6AG;
Introduction Date: February 06, 2012
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 34A/180A TO263-7
N-Channel 60V 34A (Ta), 180A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 34A (Ta), 180A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TO263-7
N-Channel 60V 34A (Ta), 180A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TO263-7
IPB014N06N - 12V-300V N-Channel Power MOSFET
MOSFET, N-CH, 60V, 180A, TO-263-7; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
MOSFET N-CH 60V 34A/180A TO263-7
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Rochester Electronics | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 776842-IPB014N06NATMA1 | IPB014N06NATMA1 | IPB014N06NATMA1TR-ND | IPB014N06NATMA1 | 2591541 | 97Y1819 | IPB014N06NATMA1 | IPB014N06NATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB014N06NATMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | Mosfet, N-Ch, 60V, 180A, To-263-7; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| PD | 3000 to 214000 milliwatts | 3000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-263; SOT3 | TO-263; TO-263-7, D²Pak (6 Leads + Tab) | TO-263; TO-263-7, D2PAK (6 Leads + Tab) | PG-TO263-7 | TO-263; TO-263 | TO-3; TO-263 | 6V, 10V | |
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
