Infineon Technologies AG N-Channel Power MOSFET IPD036N04L-G

Description
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. Summary of Features Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Ideal for fast switching applictions RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Isolated DC-DC converters Motor control Or-ing switches Applications Fuel-cell control unit (FCCU) LED strips and signage
  • N-Channel Power MOSFET - IPD036N04L-G - Infineon Technologies AG
    Infineon Technologies AG
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Description
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. Summary of Features Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Ideal for fast switching applictions RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Isolated DC-DC converters Motor control Or-ing switches Applications Fuel-cell control unit (FCCU) LED strips and signage
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Datasheet
Datasheet Summary
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The IPD036N04L G is an N-channel MOSFET designed for high-efficiency switching in SMPS and DC/DC converters. It is packaged in a PG-TO252-3 surface-mount case with a maximum continuous drain current of 90 A at 25°C and a drain-source on-resistance of 3.6 mΩ at 10 V gate drive. The device is rated for 40 V drain-source voltage, with 100% avalanche testing and an avalanche energy rating of 55 mJ. Thermal resistance from junction to case is 1.6 K/W, and operating temperature ranges from -55 °C to 175 °C. It meets RoHS compliance and is qualified per JEDEC J-STD-20 and JESD22 standards.

Datasheet Summary
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The IPD036N04L G is an N-channel MOSFET designed for high-efficiency switching in SMPS and DC/DC converters. It is packaged in a PG-TO252-3 surface-mount case with a maximum continuous drain current of 90 A at 25°C and a drain-source on-resistance of 3.6 mΩ at 10 V gate drive. The device is rated for 40 V drain-source voltage, with 100% avalanche testing and an avalanche energy rating of 55 mJ. Thermal resistance from junction to case is 1.6 K/W, and operating temperature ranges from -55 °C to 175 °C. It meets RoHS compliance and is qualified per JEDEC J-STD-20 and JESD22 standards.

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N-Channel Power MOSFET - IPD036N04L-G - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPD036N04L-G
N-Channel Power MOSFET IPD036N04L-G
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. Summary of Features Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Ideal for fast switching applictions RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Isolated DC-DC converters Motor control Or-ing switches Applications Fuel-cell control unit (FCCU) LED strips and signage

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.


Summary of Features

  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • Ideal for fast switching applictions
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Isolated DC-DC converters
  • Motor control
  • Or-ing switches

Applications

  • Fuel-cell control unit (FCCU)
  • LED strips and signage
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPD036N04L-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0036 ohms
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