MOSFET N-CH 80V 120A D2PAK Product overview: IPB024N08N5ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB024N08N5ATMA1
N-Channel 80V 120A (Tc) 214W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 80V 120A D2PAK
MOSFET N-CH 80V 120A D2PAK
IPB024N08 - 12V-300V N-Channel Power MOSFET
MOSFET N-CH 80V 120A D2PAK
MOSFET N-CH 80V 120A D2PAK
MOSFET SINGLE, 120A, 80V, 214W, TO-263-3 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB024N08N5ATMA1 | 448-IPB024N08N5ATMA1TR-ND | IPB024N08N5ATMA1 | IPB024N08N5ATMA1 | IPB024N08N5ATMA1 | IPB024N08N5ATMA1 | 73AJ7091 |
| Product Name | 80V 120A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Single, 120A, 80V, 214W, To-263-3 Rohs Compliant Infineon | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 80 volts | 80 volts | |||||
| Transconductance | 0.0890 kS | ||||||
| PD | 214 milliwatts | 214000 milliwatts |