Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB65R095C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications Residential air conditioning: Smart (IoT) and efficient cooling EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
  • 500V-950V N-Channel Power MOSFET - IPB65R095C7 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPB65R095C7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications Residential air conditioning: Smart (IoT) and efficient cooling EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
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Datasheet
Datasheet Summary
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The IPB65R095C7 is a 650V N-channel superjunction MOSFET in a D²PAK package, designed for high-efficiency power conversion in applications such as PFC and hard-switching PWM stages in computing, server, telecom, UPS, and solar systems. It features a maximum on-state resistance of 95 mΩ, a total gate charge of 45 nC, and a pulsed drain current of 100 A. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.98 °C/W. It is qualified to JEDEC standards J-STD-020 and JESD22, and is Pb-free with a halogen-free mold compound.

Datasheet Summary
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The IPB65R095C7 is a 650V N-channel superjunction MOSFET in a D²PAK package, designed for high-efficiency power conversion in applications such as PFC and hard-switching PWM stages in computing, server, telecom, UPS, and solar systems. It features a maximum on-state resistance of 95 mΩ, a total gate charge of 45 nC, and a pulsed drain current of 100 A. The device supports a maximum junction temperature of 150°C and has a thermal resistance from junction to case of 0.98 °C/W. It is qualified to JEDEC standards J-STD-020 and JESD22, and is Pb-free with a halogen-free mold compound.

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500V-950V N-Channel Power MOSFET - IPB65R095C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPB65R095C7
500V-950V N-Channel Power MOSFET IPB65R095C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power Applications Residential air conditioning: Smart (IoT) and efficient cooling EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

Applications

  • Residential air conditioning: Smart (IoT) and efficient cooling

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Supplier's Site Datasheet
Transistors - IPB65R095C7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB65R095C7
Transistors IPB65R095C7
TO-263 MOSFETs ROHS

TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPB65R095C7 IPB65R095C7
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0950 ohms
QG 45 nC
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