Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-Channel 60V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
Infineon MOSFET IPB120N06S4H1ATMA2
Infineon MOSFET IPB120N06S4H1ATMA2
Infineon MOSFET IPB120N06S4H1ATMA2
MOSFET N-CH 60V 120A TO263-3
MOSFET N-Ch 60V 120A D2PAK-2
MOSFET, N-CH, 60V, 175DEG C, 250W ROHS COMPLIANT: YES
| Rochester Electronics | DigiKey | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB120N06S4H1ATMA2 | 448-IPB120N06S4H1ATMA2TR-ND | 2183032 | IPB120N06S4H1ATMA2 | IPB120N06S4H1ATMA2 | 39AH8896 |
| Product Name | Single FETs, MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 175Deg C, 250W Rohs Compliant Infineon | |
| Polarity | N-Channel | N-Channel |
