The IPB022N12NM6 is an N-channel MOSFET rated for 120 V drain-source voltage with a maximum on-resistance of 2.2 mΩ and a continuous drain current of 167 A at 25°C case temperature. It is packaged in a PG-TO263-3 (D²PAK) case with dimensions of 9.65 mm maximum width and 15.88 mm maximum height, and supports an operating junction temperature up to 175°C. The device is fully qualified for industrial applications according to JEDEC standards, RoHS compliant, and halogen-free per IEC 61249-2-21. It features a gate charge of 113 nC and reverse recovery charge of 418.2 nC at 1000 A/µs, optimized for high-frequency switching and synchronous rectification.
OptiMOS™ 6 power MOSFET normal level 120 V in D²PAK 3-pin package
This is a normal level 120 V MOSFET in D²PAK 3-pin packaging with 2.2 mOhm on-resistance. IPB022N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB022N12NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB022N12NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0022 ohms |
