Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R180C7

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E _oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Summary of Features

• Reduced switching loss parameters such as Q _G, C _oss, E _oss
• Best-in-class figure of merit Q _G*R _DS(on)
• Increased switching frequency
• Best R _(on)*A in the world
• Rugged body diode

Benefits

• Enables increasing switching frequency without loss in efficiency
• Measure showing key parameter for light load and full load efficiency
• Doubling the switching frequency will half the size of magnetic components
• Smaller packages for same R _DS(on)
• Can be used in many more positions for both hard and soft switching topologies

Potential Applications

• Server
• Telecom
• PC power
• Solar
• Industrial
• USB-PD

Applications

• Adapters and chargers
• Cordless power tools and outdoor power equipment
• Information & communications technology

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Designers who used this product also designed with

• 2ED2184S06F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs
• 2EDL23N06PJ |
  Gate driver ICs
• 2EDR8259X |
  Gate driver ICs
• 1EDI20N12AF |
  Gate driver ICs
• 2ED2110S06M |
  Gate driver ICs
• 2ED2184S06F |
  Gate driver ICs
• 2EDB8259Y |
  Gate driver ICs

1
2

Manufacturer: Infineon Technologies
Win Source Part Number: 1185978-IPA60R180C7
Manufacturer Homepage: www.infineon.com
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

9A, 600V, 0.18OHM, N-CHANNEL MOS Product overview: IPA60R180C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 9A, 600V, 0.18OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9A, 600V, 0.18OHM, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA60R180C7 can be used for catalog matching and distributor lookup.