The IPA60R180C7 is a 600V CoolMOS™ C7 superjunction MOSFET designed for high-efficiency switching applications such as PFC and LLC topologies in server, telecom, and solar power systems. It is packaged in a PG-TO-220 FullPAK with dimensions of 16.15 mm × 10.65 mm × 29.75 mm. The device has a maximum continuous drain current of 22 A at a case temperature below 150°C and a drain-source on-state resistance of 180 mΩ. It features a dv/dt ruggedness of 120 V/ns, a gate charge of 24 nC, and an output capacitance energy of 2.7 µJ at 400 V. The MOSFET is fully qualified according to JEDEC for industrial applications and supports avalanche energy up to 53 mJ with a single pulse. The body diode has a reverse recovery time of 280 ns and a peak recovery current of 21 A.
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
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9A, 600V, 0.18OHM, N-CHANNEL MOS Product overview: IPA60R180C7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 9A, 600V, 0.18OHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9A, 600V, 0.18OHM, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA60R180C7 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1185978-IPA60R180C7
Manufacturer Homepage: www.infineon.com
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
9A, 600V, 0.18OHM, N-CHANNEL MOS
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA60R180C7 | 285-IPA60R180C7 | 1185978-IPA60R180C7 | IPA60R180C7 |
| Product Name | 500V-950V N-Channel Power MOSFET | N-Channel 9A 600V 0.18OHM MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R180C7 | Single FETs, MOSFETs |
| Polarity | N-Channel; N | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | ||
| rDS(on) | 0.1800 ohms | |||
| QG | 24 nC | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
